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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1730 DESCRIPTION *High Voltage *High Switching Speed *Built-in damper diode *Wide Area of Safe Operation APPLICATIONS *Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCES VCEO VEBO IC ICP IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage VALUE 1500 UNIT V Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current- Continuous Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range w w scs .i w 1500 700 7 V V V 5 15 2 100 150 -55-150 A A A W .cn mi e PC Tj Tstg isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL V(BR)EBO VCE(sat) VBE(sat) hFE PARAMETER Emitter-Base Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain CONDITIONS IE= 500mA; IC= 0 IC= 4A; IB= 1A B 2SD1730 MIN 7 TYP MAX UNIT V 8.0 1.5 5 25 10 V V IC= 4A; IB= 1A B IC= 1A; VCE= 5V VCB= 750V; IE= 0 A mA V MHz ICBO Collector Cutoff Current VCB= 1500V; IE= 0 VECF fT C-E Diode Forward Voltage Transition Frequency Switching Times, Resistive Load ts tf Storage Time Fall Time w w. w sem isc IF= 5A IC= 1A; VCE= 10V .cn i 1.0 2.3 2 1.5 0.2 s s IC= 4A; IB1= 0.8A; IB2= -1.6A, VCC= 200V isc Websitewww.iscsemi.cn |
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